iisc.ernet.in Electronics & Communication GATE Exam Question Paper : Indian Institute of Science Bangalore
Name of the University : Indian Institute of Science Bangalore
Degree : Engineering
Exam : GATE Exam
Document Type : Model Question Paper
Name of the Subject : Electronics And Communication Engineering
Website : iisc.ernet.in
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Electronics And Communication Engineering Model Paper :
Set – 1 :
Q.1 Consider a system of linear equations
x – 2 y + 3z = -1,
x – 3y + 4z = 1, and
-2x + 4 y – 6z = k.
Related : Indian Institute of Science Bangalore Computer Science GATE Exam Question Paper : www.pdfquestion.in/7655.html
The value of k for which the system has infinitely many solutions is ______.
Q.2 A function f (x) =1- x2 + x3 is defined in the closed interval [-1,1]. The value of x , in the open interval (-1,1) for which the mean value theorem is satisfied, is
(A) -1/2 (B) -1/3 (C) 1/3 (D) 1/2
Q.3 Suppose ?? and B are two independent events with probabilities p(a)= 0 and P(b) = 0. Let A and b be their complements. Which one of the following statements is FALSE?
Q.4 Let z = x + iy be a complex variable. Consider that contour integration is performed along the unit circle in anticlockwise direction. Which one of the following statements is NOT TRUE?
Q.5 The value of p such that the vector 123 is an eigenvector of the matrix ?? 4 1 2 2 1 14 -4 10 _______.
Q.6 In the circuit shown, at resonance, the amplitude of the sinusoidal voltage (in Volts) across the capacitor is ________.
Q.7 In the network shown in the figure, all resistors are identical with R = 300 O. The resistance Rab (in O) of the network is ______.
Q.8 In the given circuit, the values of V1 and V2 respectively are
(A) 5 V, 25 V (B) 10 V, 30 V (C) 15 V, 35 V (D) 0 V, 20 V
Q.9 A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
(A) both the P-region and the N-region are heavily doped
(B) the N-region is heavily doped compared to the P-region
(C) the P-region is heavily doped compared to the N-region
(D) an intrinsic silicon region is inserted between the P-region and the N-region
Q.10 A silicon sample is uniformly doped with donor type impurities with a concentration of 1016 /cm3. The electron and hole mobilities in the sample are 1200 cm2/V-s and 400 cm2/V-s respectively.
Assume complete ionization of impurities. The charge of an electron is 1.6 ×10-19 C. The resistivity of the sample (in O-cm) is ____________.
SET-2 :
1. The value of ?? for which all the eigen-values of the matrix given below are real is
2. The magnitude and phase of the complex Fourier series coefficients ak of a periodic signal x(t) are shown in the figure. Choose the correct statement from the four choices given. Notation C is the set of complex numbers, R is the set of purely real numbers, and P is the set of purely imaginary numbers.
3. The voltage (????) across the capacitor (in Volts) in the network shown is ______ .
4. In the circuit shown, the average value of the voltage Vab (in Volts) in steady state condition is
5. The 2-port admittance matrix of the circuit shown is given by
6. An n-type silicon sample is uniformly illuminated with light which generates 1020 electron-hole pairs per cm3 per second. The minority carrier lifetime in the sample is 1 µs. In the steady state, the hole concentration in the sample is approximately 10x, where x is an integer. The value of x is ___.
7. A piece of silicon is doped uniformly with phosphorous with a doping concentration of 1016/cm3. The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is 1.6 ×10-19 C. The conductivity (inS cm-1 ) of the silicon sample at 300 K is _______.
SET-3 :
1. The contour on the x-y plane, where the partial derivative of x2+y2 with respect to the is equal to the partial derivative of 6x + 4y with respect to x, is
(A) y = 2 (B) x = 2 (C) x + y = 4 (D) x– y = 0
2. Consider the function g(t) = e-tsin(2p t)u(t)whereu(t) is the unit step function. The area under g(t) is _______.
3. For the circuit shown in the figure, the Thevenin equivalent voltage (in Volts) across terminals a-b is ________.
4. In the circuit shown, the voltage VX (in Volts) is _______.
5. At very high frequencies, the peak output voltage V0 (in Volts) is ________.
6. Which one of the following processes is preferred to form the gate dielectric (SiO2) of MOSFETs ?
(A) Sputtering (B) Molecular beam epitaxy
(C) Wet oxidation (D) Dry oxidation
7. If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?
(A) Current gain will increase.
(B) Unity gain frequency will increase.
(C) Emitter-base junction capacitance will increase.
(D) Early Voltage will increase.