Advanced Power Semiconductor Devices M.Tech Model Question Paper : mgu.ac.in

Name of the College : Mahatma Gandhi University
Department : Electrical and Electronics Engineering
Subject Code/Name : Advanced Power Semiconductor Devices
Sem : I Semester
Applicable For : 1st Year EEE Students
Home Page : mgu.ac.in
Document Type : Model Question Paper

Download Model/Sample Question Paper : https://www.pdfquestion.in/uploads/mgu.ac.in/5048-MEEID%20106-3%20Advanced%20Power%20Semiconductor%20devices.pdf

MGU Advanced Power Semiconductor Devices Question

M. TECH. Degree Examination :
First Semester :
Model Question Paper :

Related : MGU MEEID104 Electric Drives M.Tech Model Question Paper : www.pdfquestion.in/5047.html

Branch: Electrical and Electronics Engineering
Specialization: Industrial Drives and Control
MEEID 106.3 ADVANCED POWER SEMICONDUCTOR DEVICES
(2013 Admission on wards)
[Regular/Supplementary]
Time: Three Hours
Maximum: 100 Marks

1. (a) Explain Switching characteristics of power diode. (15 marks)
(b) Explain different types of power diodes. (10 marks)
OR

2. (a) Differentiate static and dynamic behavior of an Ideal switch and explain how a practical switch is deviated away from an ideal switch behavior. (15 marks)
(b) Explain briefly about schottky diode. (10 marks)

3. (a) What is quasi saturation in power BJT and also write notes on emitter current crowding. (13 marks)
(b) Explain the turn on process of a SCR in terms of device physics. What are converter grade and inverter grade SCR’s? (12 marks)
OR

4. (a) Explain about device physics and secondary breakdown of Power BJT. (12 marks)
(b) What is power darligton. (8 marks)
(c) Compare thyristor and BJT. (5marks)

5. (a) Give detail of construction and explain device physics of IGBT. (18 marks)
(b) Briefly explain switching characteristics of IGBT. (7 marks)
OR

6. (a) Give details of construction and explain device physics of MOSFET. (18 marks)
(b) Briefly explain static characteristics of MOSFET (7 marks)

7. (a) What is the need of isolation of power electronic circuits? List the advantages and disadvantages of isolation using (a) optocoupler and (b) pulse transformer. ( 10 marks)

(b) A PIC micro controller gives a square wave drive signal with amplitude of 5 volts at 10 kHz. It is to be applied to an IGBT switch. Draw and explain different type of driver circuits for an IGBT. ( 15 marks)
OR

8. (a) With necessary circuit diagram and wave forms, discuss a turn-on and turn-off snubber circuit for a power transistor. ( 20 marks)
(b) Briefly explain about the types heat sink. (5 marks)

Syllabus

Module 1 : Introduction
Power switching devices overview – Attributes of an ideal switch, application requirements, circuit symbols; Power handling capability – (SOA); Device selection strategy – On-state and switching losses – EMI due to switching – Power diodes – Types, forward and reverse characteristics, switching characteristics – rating. Shottky Diode

Module 2 : Current Controlled Devices
BJT’s – Construction, Device Physics, static characteristics, switching characteristics; Negative temperature co-efficient and secondary breakdown;

Power Darlington – Thyristors – Physical and electrical principle underlying operation, Gate and switching characteristics; converter grade and inverter grade and other types; series and parallel operation; comparison of BJT and Thyristor – steady state and dynamic models of BJT & Thyristor.

Module 3 : Voltage Controlled Devices
Power MOSFETs and IGBTs – Principle of voltage controlled devices, construction, types, Device physics, Static and Switching Characteristics- Steady state and dynamic models of MOSFET and IGBTs – Basics of GTO, MCT, FCT, RCT and IGCT.

Module 4 : Firing and Protection Circuits
Necessity of isolation, pulse transformer, opto coupler – Gate drives circuit : SCR, MOSFET, IGBTs and base driving for power BJT. Over voltage, over current and gate protections; Design of snubbers.

Thermal Protection : Heat transfer – conduction, convection and radiation; Cooling – liquid cooling, vapour – phase cooling; Guidance for hear sink selection – Thermal resistance and impedance -Electrical analogy of thermal components, heat sink types and design – Mounting types.

References

1. Kassakian J G et al, Principles of Power Electronics, Addison Wesley, 1991.
2. B W Williams, Principles and Elements of Power Electronics, University of Strathclyde,Glasgow, 2006.

3. Mohan, Undeland, Robins, Power Electronics – Concepts, Applications and Design, John Wiley and Sons, Singapore, 2000.
4. M D Singh, K B Khanchandani, Power Electronics, Tata McGraw Hill, 2001.